Manufacture of amorphous silicon thin film

Abstract

Abstract PURPOSE:To efficently form a thin film used for a solar battery, an electrophotograph, etc. by depositing Si in vacuum at a high speed with an electron beam as a heating source in the state that gas, e.g., hydrogen partly ionized exists in the vicinity of a substrate. CONSTITUTION:A substrate 3, e.g., glass plate or the like formed with a metallic plate or metallic film of aluminum or the like is secured by a support 4 in a container 2 evacuated by a pump 1. Pure Si 6 is filled in a crucible 5 provided below the substrate 3, an electron beam from an electron gun 7 is emitted to evaporate the Si, and is deposited on the substrate 3 at the maximum depositing speed, higher than 0.5mum/min. Hydrogen is, for example, introduced from a jet port 10 at the pressure of approx. 1.10<-5> Torr at the depositing time, and high frequency voltage is applied between the support 4 and the container 2. Impurity is added to the deposited thin film, for example, by mixing deping gas of PH3 or the like or adding in advance impurity in the Si. Thus, the semiconductor thin film can be formed at a high speed.

Inventors

• 👤 Takashi Suzuki
• 👤 Koichi Shinohara
• 👤 Yasuo Iijima

Bibliographic Details