Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent the disconnection in a semiconductor device by forming a hole of a desired pattern on an insulating layer convered on a substrate, sputter etching a PSG film covered next with a mask layer, forming a hole thereat, and smoothening the corners of the hole. CONSTITUTION:A polycrystalline Si film 14 to become a gate electrode is patterned on the substrate 1 of a MOSFET having a gate oxidized film 13 and a field oxidized film. Ion injection is performed to form an S region 15, a D region 16, and a PSG film 17 and a photoresist film 18 are sequentially covered on the overall surface. A window is formed at the predetermined pattern by a photolithographic method. It is then inserted into reaction tube, high frequency voltage is applied in a trifluoromethane gas, and it is sputter etched. Then, the resist is ashed and removed. In this manner, the corner of the hole opened at the film 17 and can be smoothened, thereby preventing the disconnection.

Inventors

• 👤 Naomichi Abe

Bibliographic Details