Electrode structure for semiconductor device

Abstract

Abstract PURPOSE:To simplify the pellet mounting step and to reduce the cost by providing a junction metallic layer of Ti or the like and a non-noble metal layer of Sn or the like solderable of the frame of a substrate through a barrier metallic layer of Ni or the like. CONSTITUTION:3-layer electrodes of a Ti layer 12, an Ni layer 14 and an Sn layer 16 are formed on one surface of a pellet 10 made of Si. On the other hand, a solder layer 18 made of Pb-Sn solder disc is provided through an Ni plating layer 20 of a substrate frame made of Cu. It is then filled in a furnace body containing H2 atmosphere in the superposed state of a stem 22 and a pellet 10, and is treated at a temperature of 350-450 deg.C in jection. The junction metal may include Cr, Ta, Zr or V instead of the Ti, and the barrier metal may employ Cu instead of Ni.

Inventors

• 👤 Hiroshi Kato
• 👤 Masamichi Kobayashi

Bibliographic Details