Epitaxially growing method

Abstract

Abstract PURPOSE:To prevent the occurrence of a disordered crack when epitaxially growing with thermal expansion coefficient different from a substrate by forming a notch to meet the final chip size in advance to the surface of the substrate. CONSTITUTION:The (0001) plane of Al2O3 is used as crystalline growing surface 6, and a notch 7 is formed by a laser machining to meet the final chip size in advance. A GaN8 is epitaxially formed thereon. Since the notch is formed in V shape, the GaN single crystal grown from the two surfaces collide with one another at the predetermined time and thereafter becomes polycrystal 20. Since the polycrystal 20 has space between the crystalline grains, the internal stress produced due to the difference of the thermal expansion coefficient is absorbed by the polycrystal 20, and no crack occurs.

Inventors

• 👤 Kiyoshi Yoneda

Bibliographic Details