Charge transfer device

Abstract

Abstract PURPOSE:To improve the operating speed of a charge transfer device and to enhance the transfer efficiency of the device by forming the depth of potential well induced under transfer of the CCD in three stages and sequentially deepening the depth of the well in the transfer direction. CONSTITUTION:An SiO2 film 11 and transfer electrodes 12-16 are formed on the surface of a P type silicon substrate 10. P<+> type semiconductor regions 17-21 are formed on the surface of the substrate directly under the electrode, and N<+> type semiconductor regions 22-26 are further formed. When clock pulses phi1, phi2 are supplied to the respective electrodes, the potential wells of three stages having different depths are inducted under the electrode, and the depths of the wells are sequentially deepened toward the charge trasfer direction. The acceleration caused by the fringe field effect caused by the signal charge is increased, and even if the operation speed is accelerated, high transfer efficiency can be obtained. The potential wells can also be formed by providing P<++>-P<+>-P region in the substrate.

Inventors

• 👤 Hiroshige Goto
• 👤 Koichi Sekine
• 👤 Nobuo Suzuki

Bibliographic Details