Plasma etching device

Abstract

Abstract PURPOSE:To optimize self-bias voltage at the time of etching by mounting a connecting mechanism varying a high frequency-like connection condition between an electrode at the grounding side between a pair of parallel plate electrodes constituting the plasma etching device and a vessel. CONSTITUTION:An etching chamber is composed of the torus-shaped vessel 11 formed by stainless, the discoid parallel plate electrodes 12, 13 and insulating rings 15. The connecting members 16 shaped by bending a metallic plate in a corrugated shape are inserted between an outer circumferential section of the grounding electrode 12 between the parallel plate electrodes and an inner circumferential section of the vessel 11. The grounding condition of the electrode 12 can be changed by the form and number of the connecting members 16. When a gas consisting of a halogen element is introduced into the etching chamber and a material is etched by plasma, etching characteristics depend upon the self-bias voltage, but aimed etching characteristics can be selected by properly setting the grounding condition of the electrode 12 because the self-bias voltage depends on the grounding condition of the electrode 12.

Inventors

• 👤 Takashi Yamazaki
• 👤 Tetsuo Kurisaki

Bibliographic Details