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JPS5750433A Expired / Lapsed JP ⏱️ 0.0 years remaining

Electron beam exposure method

Assignee: Fujitsu Ltd
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Filing: 1980-09-12
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Granted: —
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Expires: 2000-09-12
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Abstract

Abstract PURPOSE:To determine the amount of electron beams irradiated in a comparatively short time, and to obtain an exposure pattern having practically sufficient high accuracy through approximate correction by remodelling a position where a sample point is set. CONSTITUTION:At least the two sample points k1, k2 are set on one unit pattern 21, and the strength of electron beams scattered from the patterns 22, 23 of the surrounding is obtained by making only the sample point at the remoter side from one pattern cirrespond to the pattern (that is, k2 to the pattern 22 and k1 to the pattern 23). Accordingly, a solution of simultaneous equations determined so that the sum total of the strength of electron beams scattered given by the exposure of all rectangular patterns is equal to the optimum amount of exposure, and each unit pattern is drawn by the amount of exposure of electron beams obtained by the equations.

Inventors

  • 👤 Yasuhide Machida
  • 👤 Noriaki Nakayama
  • 👤 Norishige Hisatsugu

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-10-28 04:33
CPC Classifications
B; B82; B82Y; B82Y10/00; B82Y40/00; H; H01; H01J; H01J37/00; H01J37/30; H01J37/317; H01J37/3174

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