High withstand voltage planar type thyristor

Abstract

Abstract PURPOSE:To avoid phenomenon such as early effect and punch through by forming a portion of a PE layer facing a circular base layer shallow with the width of an NB layer surrounded by the PE and PN layers being kept constant. CONSTITUTION:In a circular base structure for a higher withstand voltage of a planar type thyristor, a PE layer 2 is formed at a depth as traditionally specified in the part 2a corresponding to the PB layer 5 and relatively shallow in the other portions. The space C between a circular base 5a and the PE layer 2 is made equal or larger than the space D as the effective width of an NB layer 3 so that the space D may be controlled to the optimum dimensions. This enables the avoiding a phenomenon such a early effect, punch through phenomenon and increased switching loss maintaining a high withstand voltage.

Inventors

• 👤 Masaaki Sadamori

Bibliographic Details