Manufacture of semiconductor substrate

Abstract

Abstract PURPOSE:To obtain easily a necessitated thin semiconductor layer when the thin semiconductor layer is to be formed on a substrate by a method wherein a thick semiconductor layer is adhered on the substrate at first, the surface layer thereof is converted into an oxide layer by an anodic oxidation treatment, and the surface layer is removed by etching. CONSTITUTION:The semiconductor layer 2 thicker than the desired thickness is made to grow on the substrate 1, and only the surface layer thereof is converted into the oxide layer 3 by the anodic oxidation treatment. The oxide layer 3 is removed with an etchant consisted of fluoric acid, and a thin semiconductor layer 2 having a transition layer 10 and a depletion layer 11 is remained on the substrate 1. After then the transition layer 10 is removed and at the same time the depletion layer 11 is also eliminated using an etchant being fitted to the semiconductor layer 2, and the desired thin semiconductor layer 2 is generated on the substrate 1. Accordingly because the transition layer and the depletion layer to be remained ordinally are removed, the semiconductor device having a favorable characteristic is enabled to obtain.

Inventors

• 👤 Takashi Mizutani
• 👤 Masamichi Omori

Bibliographic Details