Semiconductor device

Abstract

Abstract PURPOSE:To increase working speed by bringing the concentration of an electron group surface stored near an interface within a predetermined range in the device containing the heterointerface consisting of an AlxGa1-xAs monocrystal layer containing N type impurities and a GaAs monocrystal. CONSTITUTION:A GaAs substrate is heated in a MBE device and the impurities of the surface are removed, and the AlxGa1-xAs monocrystal layer, X thereof is within a range of 0.2-0.4 such as 0.3, is shaped by adding the N type impurities such as Si. A two-dimensional electron gas is stored in the GaAs layer in the vicinity of the heterointerface, and the surface concentration is decided according to the kind and concentration of the donar impurities and the shape of a layer supplying the two-dimensionl electron gas and the like, but the range of the surface concentration is brought to 3.5X10<11>-2X10<12>/cm<2> by setting these conditions properly. Accordingly, since electronic mobility can be increased up to 3X10<4>cm<2>/Vsec. or higher at 77 deg.K, an element applying the heterointerface can be accelerated.

Inventors

• 👤 Sukehisa Hiyamizu
• 👤 Toshio Fujii

Bibliographic Details