Semiconductor device

Abstract

Abstract PURPOSE:To prevent the separation of an ohmic electrode by forming a first metallic layer ohmically contacting with the surface of a semiconcuctor substrate or a semiconductor layer and by providing a second metallic layer on the first metallic layer and around the circumference of the first layer. CONSTITUTION:On an Si or compound semiconductor substrate 14, an SiO2 film 15 and an opening 16 are formed. Then, a metallic layer 17 of, for example, AuZn or AuSn etc is evaporatd on the substrae. Next, the metallic layer 17 is etched to form an electrode 17a and then Ti, Pt, Au are evaporated successively to obtain a metal covered layer 18. For example, in a semiconductor laser formed by depositing epitaxial layers 6-9 on an N type 1nP substrate 5, and AuZn electrode 11 is provided on a Zn-diffused layer 10 and the substrate back face, and then a Ti-Pt-Au layer 13 is formed on the substrate top face, obtaining an ohmic electrode. The stickness of the Ti layers on the electrodes 11, 17a is highly improved, so that almost no separation occurs on the electrode.

Inventors

• 👤 Masahiro Morimoto

Bibliographic Details