Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To improve the reverse direction characteristic of a photodetector used with reverse bias operation by selectively removing a part of the exposed surface of an N type semiconductor layer and so forming as to bury a P type semiconductor layer in the removed part. CONSTITUTION:An N type InGaAs layer 12, an N type InGaAs layer 13 and an N type InP layer 14 are sequentially epitaxially grown on an N<+> type InP substrate 11. Then, one region of the layer 14 is selectively removed from the surface. Then, P type InP layer 16 is so formed as to bury the removed region. Thereafter, a P type high impurity density region 16' is formed in the layer 16 in the vicinity of the P-N junction formed with the layers 16, 14. Thus, the layer 16 is formed as a guard ring, and the breakdown of the peripheral edge of the junction can be prevented ven if P-N junction is provided in the InP, and an avalenche amplification factor having extremely acute breakdown and very high amplification can be obtained.

Inventors

• 👤 Kenshin Taguchi

Bibliographic Details