Photographic etching method

Abstract

Abstract PURPOSE:To obtain a high contrast resist pattern suitable for fabricating VLSI elements or the like, by coating a resist on a semiconductor substrate, drying it, exposing the resist in a specific organic silicon compound atmosphere, and then, developing it. CONSTITUTION:A spinner 14 for attracting a semiconductor substrate 13 by evacuation is provided in a coating and processing chamber 12 consisting of upper and lower cups 10, 11, the substrate 13 is attracted, and the chamber 12 is evacuated through an exhaust pipe 15. Then, a resist liquid is dropped through nozzles 17, 18, and the spinner is rotated to coat the resist on the substrate 13. After that, hexamethyl-disilazane (HMDS) gas is drawn fully into the chamber 12 through a suction pipe 16 to allow the resist to absorb it and to react with it. The substrate 13 having finished absorption and reaction is taken out and patternwise exposed, and developed with an alkaline developing solution. The exposed parts 21-1, 21-3 among the parts 21-1-21-3 where HMDS reacted on the parts of the resist layer 20, 21, 22 of the substrate 19 obtained become low in developing velocity, thus permitting a pattern obtained to have high precision, because an angle 0' becomes greater than an angle 0 in the case of the HMDS treatment omitted, as shown in the figure, resulting in raising contrast.

Inventors

• 👤 Masaru Sasako

Bibliographic Details