Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To obtain a high withstand voltage element by a method wherein an insulating film, having the second aperture which is larger than the first aperture, is superposed on the insulating film having the first aperture and then ion is implanted therein. CONSTITUTION:An N<-> epitaxial layer 11 is superposed on an N type Si substrate 10 and an aperture is provided on an SiO2 film 12. A resist mask 13, having an aperture larger than said apertures, is provided and then B ion is implanted. As a result, a layer 14 is turned to P type, a layer 15 decreases in density and a high resistance is generated, and the layer 14 is surrounded by a shallow N<--> layer 15. Consequently, by the aid of a shallow P-N junction, the percentage of elongation of a depletion layer becomes larger when the radius curvature is enlarged on the side section by the effect of the low density of the N layer 15 and the diode of high withstand voltage can be obtained.

Inventors

• 👤 Toshiyasu Shimada

Bibliographic Details