Manufacture of semiconductor pressure sensor

Abstract

Abstract PURPOSE:To simplify a manufacturing process of a pressure sensitive Si diaphragm by a method wherein the front and rear surfaces of an N type Si substrate is directly diffused with high B concentration for the formation of a first and second doped layers whereof the first is covered with an epitaxially grown N type Si layer and the second is to serve as an etching resist. CONSTITUTION:B is diffused into the front and rear surfaces of a disk shaped Si substrate 9 for the formation of a P type first doped layer 10 and a second doped layer 11 and the layer 10 is covered with an N type Si layer 12 grown epitaxially and then with a heat oxidated film 13. The central part is provided with an opening wherethrough ions are implanted for the provision in the exposed layer 12 of a P type region 14 to serve as a distortion gage. The heat oxidated fiom 15 on the rear side layer 11 is applied a photoresist film 16 and the rear side lamination is provided with an opening 18 for the formation of a diaphragm. The remaining film 16 is used as a mask in a process of etching away the substrate 9 for the exposure of the layer 10 in the front surface lamination for the production of a desired diaphragm 19.

Inventors

• 👤 Teruyuki Kagami
• 👤 Ryosaku Kanzawa
• 👤 Komei Yatsuno

Bibliographic Details