H2o gas generating apparatus for oxidation of semiconductor wafer

Abstract

Abstract PURPOSE:To accomplish a uniform oxidation with the introduction of highly pure H2O by arranging a nozzle for injecting an H2 gas and an O2 gas simultaneously and a combustor with an ignition nozzle in a combustion chamber having a safety lid connected to a furnace core tube by way of a communicating path. CONSTITUTION:An H2O gas feeding tube is provided at a part o a furnace core tube 1 housing a semiconductor wafer and communicated to an H2O gas generator 3 made up of a communicating path and a combustion chamber with a safety lid. A main nozzle for injecting an H2 gas and a O2 simultaneously and a combustor with an ignition nozzle for ignition H2 gas are provided in the combustion chamber. The H2 gas is burnt in the chamber and an H2O gas generated is introduced into the furnace core tube with the O2 gas to oxidize the semiconductor wafer. This enables uniform mixing of a highly pure H2O gas with the O2 gas thereby oxidizing the semiconductor wafer evenly.

Inventors

• 👤 Hajime Onoda
• 👤 Yasuhiro Ichiko

Bibliographic Details