Semiconductor device

Abstract

Abstract PURPOSE:To obtain stable wiring or electrode having low resistance by using the two layer thin-film of polycrystal Si and a high-melting point metallic nitride or using a multilayer thin-film formed by laminating a high-melting point metallic layer onto the two layer thin-film when the wiring or the electrode is shaped to the semiconductor device. CONSTITUTION:An SiO2 film 11 is formed onto an Si substrate, the polycrystal Si film 12 is deposited onto the film 11 through a CVD method, the Mo2N film 13 is coated onto the film 12 through sputtering in the mixed gas of N2 and Ar, and the whole is used as the wiring or the electrode. The Mo film 14 is further shaped onto the film 13, and the laminate consisting of the films 12, 13, 14 is formed in a desired shape through dry etching. Accordingly, a silicide reaction is not generated between the polycrystal Si and the high-melting point metallic layer, and the stable wiring or electrode having low resistance is obtained.

Inventors

• 👤 Kohei Higuchi
• 👤 Hidekazu Okabayashi
• 👤 Eiji Nagasawa
• 👤 Mitsutaka Morimoto

Bibliographic Details