Recrystal method of semiconductor element

Abstract

Abstract PURPOSE:To obtain a good recrystal with uniform anneal, by providing a groove on a semiconductor substrate convered with an oxide film, and irradiating parallelly to the groove with laser of spot diameter/scanning width >=1, after the growth of a polycrystalline Si film on the whole surface. CONSTITUTION:An SiO2 film 2 is grown on an N type semiconductor substrate 1 surface. A plurality of grooves are digged by lithographical technique as necessary. A polycrystallin Si film 5 is piled up on the whole surface including them. Next, An ion beam 3 including P<+> ions is irradiated and so is an Ar laser beam 4. The laser beams are limited to spot diameter/scanning width >=1 thereupon. A deep and wide recrystal is produced on the irradiated pant by scanning parallelly to the grooves and doping the film 5. Thus, the surface of ion injection layer is oxidized to a depth desired. The designated oxide film is obtained within the grooves. This enables laser anneal without using a mask.

Inventors

• 👤 Keiji Kobayashi

Bibliographic Details