Three-dimensional semiconductor device

Abstract

Abstract PURPOSE:To make it possible to obtain three-dimensional integration, by integrating semiconductor circuit elements on both top and bottom surfaces of a first semiconductor through an electric insulator, piercing the semiconductor to connect said elements electrically, and connecting and fixing a similar second semiconductor to the first semiconductor by bumped metals. CONSTITUTION:The top surface part 2 and the bottom surface part 3 of the first semiconductor substrate 1 is electrically insulated and separated by an insulating body 4 which is held in-between. The semiconductor circuit elements 100-102 are integrated on the surface of the top surface part 2, and the elements 103-105 are integrated on the surface of the back surface part 3. A through hole region 7 is provided in the region where said elements are not present by etching. The top surface element 101 and the back surface element 104 are connected by using a wiring 8. Wirings 9 and 11 are provided on top and bottom surface, and the bumped metals 10 and 12 are deposited thereon. Thereafter, the second semiconductor 5 having the similar structure is formed. The bumped metal 13 provided on the surface is contacted with the metal 12. In this way required number of stages are stacked. The circuit is provided only on the top surface of the substrate at the lowest stage, and the substrate is fixed to a package base 14.

Inventors

• 👤 Tadashi Hirao

Bibliographic Details