Formation of insulating film

Abstract

Abstract PURPOSE:To realize on a semiconductor substrate a uniformly thick, impurity free, low boundary level density, fine quality insulating film at relatively low temperatures by a method wherein ionized O or N ions are implanted in the substrate and the implanted region is then subjected to annealing by laser beams that converts the film into an insulating film. CONSTITUTION:When forming an insulating film 6 exemplifiedly of SiO2 or Si3N4 on an Si substrate 1, an ion injected region 3 is formed by injecting ionized O or N atoms by the ordinary ion implanting method, the region of implantation on the substrate 1 located as desired and the quantity of implantation and the acceleration voltage dependent on the thickness of the insulating film 6 to be formed. The temperature of the substrate 1 is kept in the vicinity of 800 deg.C and the O ion implantation is performed in an O atmosphere and the N ion implantation in an N atmosphere. After this, the region 3 is uniformly exposed to a laser beam 5. The conditions of illumination is dependent upon the thickness of the insulating film 6 to be formed in the region 3. A desired insulating film 6 is obtained due to the laser beam 5 causing a perfect reaction between implanted ions and Si and eliminating lattice defects already in existence.

Inventors

• 👤 Kanetake Takasaki
• 👤 Yuji Furumura
• 👤 Mikio Takagi

Bibliographic Details