Amorphous silicon diode

Abstract

Abstract PURPOSE:To prevent the occurrence of leak short-circuit between a lower and an upper electrode, by a method wherein an insulating layer is formed between an amorphous Si layer and the upper electrode so as to cover a staged part produced at the end of the amorphous Si layer. CONSTITUTION:A lower electrode 2, a first conductive amorphous Si layer 3, a second conductive amorphous Si layer 4, and an upper electrode 5 are formed on a substrate 1. An insulating layer 6 is formed at a staged part produced at the end of the amorphous Si layer 4, and this permits the prevention of the occurrence of leak short-circuit between the lower electrode 2 and the upper electrode 5.

Inventors

• 👤 Mitsuhiko Tashiro
• 👤 Nobuki Ibaraki
• 👤 Yoshiko Yoshioka

Bibliographic Details