Pattern generator

Abstract

Abstract PURPOSE: To etch a highly fine pattern with a high speed by a method wherein photoresist is directly patterned by laser processing technology. CONSTITUTION: A laser beam 24 from a processing laser source 22 is introduced into a polarizer 25 through an optical modulator 23 and is polarized to X- and Y-direction for at least one axis. After the polarization the laser beam 24 is bent by a reflecting mirror 26 and is focused on a film 29 to be patterned on a specimen 28 by a focusing lens 27 and direct processing is performed. During such direct processing a focus depth is small because the laser beam 24 is squeezed to a very small spot diameter. So the focusing position is kept constant by a Z-axis shifting mechanism of a shifting stand in vacuum. With above method, as the laser beam has a high resolving power and can be polarized with a high speed, a highly fine pattern can be obtained and because of the direct laser processing, conventional process such as resist process is eliminated, so that manufacturing time can be reduced. COPYRIGHT: (C)1982,JPO&Japio

Inventors

• 👤 Sumio Hosaka
• 👤 Akihiro Takanashi
• 👤 Toshishige Kurosaki
• 👤 Shinji Kuniyoshi
• 👤 Yoshio Kawamura
• 👤 Tsuneo Terasawa

Bibliographic Details