Bipolar transistor device

Abstract

Abstract PURPOSE:To eliminate the influence of a variation in collector voltage for current amplification factor and to contrive the improvement of dielectric strength across base and collector by connecting a bipolar transistor and an FET as predetermined wherein Early effect is eliminated. CONSTITUTION:The collector of a bipolar type N-P-N transistor 1 is connected with the source of a junction FET2 and the base of the transistor 1 is connected with the gate of the FET2 to act as a bipolar transistor as a whole. This structure applies reverse bias to the gate of the FET2 against channel to perform normal active operation and acts as an FET in accordance with a change in collector voltage, accordingly, the voltage across the collector and base of the transistor 1 drops by the voltage drop of the channel of the FET2 and reverse dielectric strength increases by the amount of voltage drop. Because the higher voltage across the collector and base generates the more voltage drop in the channel and actual influence on the collector voltage of the transistor 1 will be small, a change in current amplification factor due to a variation in the collector voltage will be reduced.

Inventors

• 👤 Yoshitaka Tawara

Bibliographic Details