Processing method for semiconductor substrate

Abstract

Abstract PURPOSE:To enhance the gettering effect by implanting ions of at least two kinds of elements from the side opposite to the element forming surface of a substrate, thereafter performing gettering. CONSTITUTION:In the case B and P ions are implanted, the gettering effect does not increase by only increasing the amount of dose. The peak value of the gettering effect (life time) exists only in a specific range of dosing amount (i.e. specific mixing ratio of B and P). If the dosing amounts of B and P are set at 10<14>-10<15>cm<-3>, respectively, the peak is formed in the life time even though the individual dosing amount is relatively small, and the gettering effect is improved than in the case of single implantation of P. The lattice defects increase by the implantation of two kinds of the element ions, and the difference in the radii of the atoms of the implanted ions effectively acts. Therefore, the gettering effect is remarkably enhanced.

Inventors

• 👤 Hiroyuki Matsumoto
• 👤 Junichi Aoyama

Bibliographic Details