Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form a fine insulator for isolation having no intrusion in transverse direction by a method wherein a film oxide and film nitride are formed on an Si film surface which is selectively formed on a surface of a semiconductor substrate, and then changed to oxides by forming Si on the exposed substrate surface. CONSTITUTION:An Si3N4 film is selectively placed on the Si substrate 31 and formed with the Si film over the whole surface. A polycrystal 38 produced on the film nitride is selectively removed to leave a single crystal 32 behind. Heat-oxidized SiO2 film 39 and Si3N4 film are formed on the surface of the single crystalline Si film 32, and the part of the substrate surface on which the Si3N4 film is formed at first is exposed to form an Si film 302 thereon. The Si film 302 is oxidized to be changed an Si film 35 and made an isolation insulating film. At this time, the Si film 302 is allowed to be formed thin so as to make a flat degree better. Whereby the intrusion into the isolation insulating film in transverse direction is removed and particularly, the fine insulating film for a bipolar IC is formed.

Inventors

• 👤 Kunio Aomura

Bibliographic Details