Semiconductor treatment device

Abstract

Abstract PURPOSE:To correct the fluctuations of plasma effect in the central part and the peripheral part by a method wherein the supply section of reaction gas is separated into two systems, i.e. the central part and peripheral part, and the gas amount to be supplied can respectively independently be controlled, in a plasma treating apparatus. CONSTITUTION:A susceptor 2 holding a wafer 1 and a gas feeder 4 (4A, 4B) are both disc and arranged in parallel facing to each other in a reaction chamber. The gas feeder 4 is composed of two gas supply units 4A and 4B which respectively independently control a flow-rate of the reaction gases. A mass flow meter and needle valve etc. are employed for flow-rate regulating devices 7A, 7B. Thus, there can be corrected a nonuniformity in the treatment of plasma caused by the difference in the plasma effects in the central part and the peripheral part of the reaction chamber. For example, when a silicon nitride film is formed on the wafer 1 on the plasma treatment, the more reaction gases are made to be supplied to the peripheral part 4B rather than to the central part 4A.

Inventors

• 👤 Itaru Yamanaka

Bibliographic Details