Manufacture of mos type semiconductor device

Abstract

Abstract PURPOSE:To compensate the deterioration in the characteristics of an MOS transistor due to the crystal defect by irradiating beforehand energy beam in parallel with the longitudinal channel direction of the transistor in the semiconductor layer when providing the MOS transistor in the semiconductor layer formed on an insulating substrate. CONSTITUTION:An n<-> type monocrystalline Si layer 2 is epitaxially grown on a sapphire substrate 1, is etched to form the layer in an insular state. Subsequently, phosphorus ions are implanted to the insular layer 2 to the extent of dosage of 5X 10<11>cm<-2>, and subsequently Nd: YAG laser beam is scanned and irradiated thereto along the channel longitudinal direction of the MOS transistor formed later with energy density of 500mJ/cm. Thereafter, a gate electrode 4 is formed through a gate SiO2 film 3 at the center on the surface of the layer 2, and with the electrode as a mask, n<+> type source and drain regions 5 and 6 are diffused in self-matching manner. Then, an SiO2 film 7 is accumulated in an ordinalry manner, a window is opened thereat, and aluminum electrodes 8, 9 are mounted thereon.

Inventors

• 👤 Kenji Shibata

Bibliographic Details