Method and device for ion beam etching

Abstract

Abstract PURPOSE:To form a highly-accurate pattern having vertical cross-sectional shape to the surface of a sample by irradiating accelerated and focusing oxygen ion beams on an organic layer provided on the surface of the sample wherein the predetermined pattern of the organic layer is removed. CONSTITUTION:A sample 45 providing an organic layer 46 on the surface of the sample is installed on a sample base plate 49 and oxygen ion beams 44 emitted from an oxygen ion source 431 are converged by a condensing lens 433. Blanking control is applied by a blanker 434 and only the ions passed through a diaphragm 435 are converged by an objective lens 436. Then, deflection control is applied by a deflector 437 to irradiate the beams to the organic layer 46. And the irradiated organic layer is removed to form a predetermined pattern. In this way, an organic pattern having high-dimension accuracy will be formed to have a vertical cross section to the surface of the sample.

Inventors

• 👤 Sotaro Edokoro
• 👤 Hiroshi Gokan
• 👤 Masaki Ito

Bibliographic Details