Mos field effect transistor and manufacture thereof

Abstract

Abstract PURPOSE:To prevent the short channel effect in an MOS field effect transistor by forming an extremely short channel using an oblique etching of AlxGa1-xAs and longitudinally etching the GaAs in the channel part. CONSTITUTION:N<+> type AlxGa1-xAs26 (0<x<1) is epitaxially grown on the N type GaAs epitaxial layer 25 on a P type GaAs substrate or semi-insulating substrate, and the layer 26 is obliquely etched through a photoresist pattern 27 using selective and anisotropic etchant. Then, with AlxGa1-xAs as a mask the GaAs is etched using the selective etchant of the GaAs. Then an insulating layer 28 is formed on the surface of the GaAs and AlxGa1-xAs, a gate electrode 29 is formed on the insulating layer, and further the source electrode 30 and drain electrode 31 are formed thereon.

Inventors

• 👤 Hideki Hayashi
• 👤 Kenichi Kikuchi

Bibliographic Details