JPS5376771A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Insulated gate type field effect transistor
Assignee: Toshiba Corp
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Filing: 1976-12-20
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Granted: —
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Expires: 1996-12-20
Abstract
Abstract PURPOSE: To reduce the floating capacity between gate and substrate, increase dielectric strength and increase mobility by forming an oxide film on a semi-insulation type semiconductor of less than 1 x 10 18 /cm 3 in impruity concentration, and making transmission regions of electrodes or holes produced at their interface as an operating region. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Toshiaki Ikoma
- 👤 Hirokuni Tokuda
- 👤 Kiyoo Kamei
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-30 23:24
CPC Classifications
—
Claims Analysis
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References Cited (Backward Citations)
US3493824A
Cited
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