Film transistor

Abstract

Abstract PURPOSE:To obtain a film transistor which causes no erroneous action by using an amorphous Si layer as an active semiconductor region and providing light barrier layer consisting similarly of amorphous Si on both surfaces of the above layer. CONSTITUTION:The first light barrier film 14 consisting of amorphous Si formed by doping 0.1% or more of impurities is formed on a transparent substrate 11 such as glass or the like. The full surface of the above film is coated with the first insulating film 15. Then, a source electrode 6 and a drain electrode 7 are provided at a suitable interval on the film 15. While burying the space between these electrodes, an amorphous Si active layer 12 including H2 from several % to several tens % on its full surface and having a uniform thickness is stacked by glow discharge or the like. Thereafter, the surface is again coated with the second insulating film 13, on which a gate electrode 5 corresponding to the electrodes 6 and 7 is mounted. The second amorphous Si light barrier film 16 is formed on both sides of the above gate electrode 5 while positioning on the film 13. By this procedure, when this transistor is used in a liquid crystal display device, no erroneous action due to irradiation of light occurs.

Inventors

• 👤 Yoshinori Yukimoto

Bibliographic Details