Manufacture of semiconductor laser

Abstract

Abstract PURPOSE:To obtain the laser which has a flat surface, excellently radiates heat, ensures threshold value currents and has a superior temperature characteristic by combining specified processes such as mesa etching, melt back, and diffusion of a dopant. CONSTITUTION:An N type InGaAsP layer 2, a P type InP layer 3 and an InGaAsP layer 4 are grown on an N type InP substrate 1, a resist film 14 is formed along the laser-ray propagating direction in a striped shape, mesa etching is conducted up to depth reaching the N type InGaAsP layer 2, and both flanks along the laser-ray propagating direction is made up. The P type InP layer 3 and the N type InGaAsP layer 2 are left by metl-back from the surface, and a P type InP layer 5, an N type InP layer 6 and an InGaAsP layer 7 are grown on the layers 2, 3. A P type dopant (Cd, Zn, etc.) is diffused up to depth 10 reaching the P type InP layer 3 at the top of a stripe from a surface of the IGaAsP layer 7, and a P type layer 8 and P a type InGaAsP layer 9 are built up.

Inventors

• 👤 Toshio Murotani
• 👤 Jun Ishii
• 👤 Etsuji Omura

Bibliographic Details