Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To enable high integration of a semiconductor device by forming an ion implantation resistant mask on the surface of the semiconductor substrate, forming a buried insulating film by an ion implantation and forming a thermal oxidation film on the field region surrounded by the insulating film, thereby eliminating the intrusion of the oxide film. CONSTITUTION:An oxidiation resistant and ion implantation resistant mask formed of an SiO2 film 2 and an Si3N4 film 3 is formed on the element forming region of a P type Si substrate 1, oxygen ions are implanted, and a series of SiO2 film 4 is buried in the surface of the substrate in the interior of the substrate in the field and on the surface of the substrate under the mask. Then, a thermally oxidized SiO2 film 5 is formed on the surface of the substrate surrounded by the SiO2 film 4. After removing the mask, the element such as an MOS device can be formed on the active region. Thus, the lateral growth of the thermally oxidized insulating film is suppressed in the buried insulating film, thereby eliminating the intrusion of the field film into the active region, and forming the microminiaturized element in high integration.

Inventors

• 👤 Shigeharu Horiuchi

Bibliographic Details