Manufacture of semiconductor integrated circuit

Abstract

Abstract PURPOSE:To enhance the integrity of a semiconductor integrated circuit be sequentially forming an SiO2 film, a polysilicon film and an Si3N4 film on a semiconductor substrate, removing a part of the Si3N4 film by an anisotropic etching and forming a thermally oxidized film with the residual Si3N4 film as a mask. CONSTITUTION:The SiO2 film 2, polysilicon film 3 and Si3N4 film 4 are sequentially formed on the surface of a P type Si substrate 1, and a part of the film 4 is selectively removed by anisotropic etching such as an ion etching or the like using a photoresist mask 5. After the photoresist is then removed, a field oxide film 6 is formed by thermal oxidation with the Si3N4 film as a mask. As this time strain force occurred upon thermal oxidation is absorbed by the film 3. Thus, the crystalline defect such as dislocation or the like is not introduced into the surface of the substrate as caused by the strain force, and the leakage current can also be eliminated, the field film can be precisely formed, and the integrity of the MOSIC or the like can be improved.

Inventors

• 👤 Osamu Ozawa
• 👤 Hiroshi Iwai

Bibliographic Details