Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent the lowering of specific resistance due to thermal deformation caused in the process of repairing defects of the crystal of a substrate to be performed afterward by implanting ions into the surface section of the GaAs semiconductor substrate or the like excepting element forming region beforehand. CONSTITUTION:An Si3N4 film 2, for instance, is formed on the substrate 1 composed of GaAs added by Cr as the element to heighten the specific resistance and the like and then, a photo resist 3 is formed on the element forming region. Successively, Cr ion is implanted to form almost even implantation layer 4 on the surface layer of the substrate. After this process, the photoresist film 3 is removed and a new photoresist film 5 is applied on the region not intended for the elements. After the etching away of the Si3N4, Si ion is implanted to lower the specific resistance whereby the element forming region 6 is formed. Thereafter, following the heat treatment for repairing defects of the crystal, the elements are formed by the well-known method to obtain the complete semiconductor device.

Inventors

• 👤 Toshio Hashimoto

Bibliographic Details