Solidstate image sensor

Abstract

Abstract PURPOSE: To increase the resolution, by transferring the photo signal electric charge to a horizontal shift register and outputting it, after it stored in photo electric converting elements arranged in a matrix is transferred on a vertical transfer line. CONSTITUTION: The signal charge stored in photo diodes 31 arranged on a matrix of m-rows and n-columns is transferred to a transmission line 35, by turning on a vertical MOS switch 32 first during one horizontal blanking period through the application of vertical scanning pulses to it. Next, transfer pulses are fed to pulse input lines 37, 38 and the signal charge on a transmission line 35 is transferred to a drain section N of an MOSFET36 once. Further, transfer pulses VTB are fed to a pulse input line 311, then the signal charge in the storage section N is transferred to a horizontal shift register 312. After that, it is transferred and read in toward the signal output section 313 during one horizontal scanning period. COPYRIGHT: (C)1981,JPO&Japio

Inventors

• 👤 Sumio Terakawa
• 👤 Toru Takamura
• 👤 Sakaki Horii
• 👤 Takahiro Yamada

Bibliographic Details