Installation of filmlike source of diffusion

Abstract

Abstract PURPOSE:To prevent a positional deviation and a defective adhesion due to evaporative contraction of diffusion source by a method wherein laminating materials such as a P type filmlike diffusion source with a larger diameter than that of a wafer, a wafer and an N type filmlike diffusion source with the same diameter as the diffusion source are superposed, and then a weight is attached. CONSTITUTION:A discoid stand 2a is positioned on a diffusion boat 1. On this boat, an N type filmlike diffusion source 4 with the same diameter as a wafer 4, a wafer 4, a P type filmlike diffusion source 9 with a larger diameter than that of the wafer, the wafer 4 are superposed in the above order, and a discoid quartz weight 2b having a larger diameter than the wafer and the diffusion source is placed on the second layer of the diffusion source 9. Hereby, as the diffusion source 9 has a larger diameter than that of the wafer 4, no gap is made when it is contracted at the time of evaporation. In addition, as a uniform weighting is applied by the weight of the wafer itself and the weight 2b, the positional deviation between the wafer and the diffusion sources 3 and 9, and a diffective adhesion are rotally eliminated, a normal diffusion is performed, evaporated impurities do not infiltrate into the wafer surface because there is no gap and a semiconductor device of stabilized quality can be obtained.

Inventors

• 👤 Shizutaka Okubo

Bibliographic Details