Self-alignment diffusing method

Abstract

Abstract PURPOSE:To obtain a diffusion layer leaving fine gaps by performing a self-alignment for an insulating film and other patterns which have been formed in advance by a method wherein the thickness of the film to be deposited on a semiconductor substrate and an acceleration voltage of ion injection are prescribed. CONSTITUTION:An insulating film 2 is formed on a semiconductor substrate 1 and a vertical side 2a and an ha thickness are provided. Then an SiO2 film 3 with an hb thickness is laminated by thermal resolution of silane. At this time, an end surface section 3a with an hb' thickness is formed. Then impurity ion is injected vertically on the substrate surface and an impurity layer 4 is formed by adjusting an acceleration voltage in such way that an ion flying range of Rp is made a little larger than that of hb. In this case, the distance d1 between the point where the layer 4 is crossing the surface of the substrate 1 and a pattern side 2a is made almost in proportion to the insulating film thickness hb. Therefore, the spacing d1 can be controlled delicately by the ion acceleration voltage. Then an annealing is performed and the diffusion layer 4' having a pattern 2 and a spacing di' is formed by means of self-alignment.

Inventors

• 👤 Takeya Ezaki
• 👤 Kosei Kajiwara

Bibliographic Details