Semiconductor integrated circuit

Abstract

Abstract PURPOSE:To facilitate an easy formation of an integrated circuit into an LSI, by producing the threshold voltage through the emitter of the bipolar transistor having an emitter-follower working and then connecting the serial circuit of the insulated gate transistor and the resistance to the base of the bipolar transistor. CONSTITUTION:The threshold voltage is generated at the emitter of the bipolar transistor TRQ1A having an emitter-follower working in the threshold voltage generating circuit A, and the serial circuit of the insulated gate TRQ2A-Q4A puls the resistances R1A and R2A is connected to the base of the TRQ1A. The threshold voltage VRDA given from the circuit A is applied to the base of the TRQ2C of the insulated gate TRQ1C and Q2C which switch the current of the differential Amp of the current switching logic circuit B. At the same time, the signal supplied from the signal input terminal IN is applied to the base of the TRQ1C, and the drain of the TRQ1C is applied to the gate of the bipolar TRQ3C having an emitter-follower working. And the signal is delivered through the signal output terminal OUT of the emitter of the TRQ3C. Then both the circuit A and the logic circuit B are formed into an LSI each, thus holding the prescribed temperature coefficient and voltage fluctuation coefficient.

Inventors

• 👤 Joji Nokubo

Bibliographic Details