Manufacture of complementary type mos semiconductor device

Abstract

Abstract PURPOSE:To reduce the number of masks and a parasitic capacity between source and drain regions under a gate region by thickening oxide films provided on a semiconductor substrate at the regions except a gate region wherein self-matching gate region formation is permitted. CONSTITUTION:A P<-> type well region 14 is formed on an N type Si substrate by diffusion. An SiO2 film 16 and an Si3N4 film 17 are formed by stacking the films on the whole surface. Next, openings 18 and 19 are bored through the stacking films to form the P<+> type source and drain regions 20 and 21 of a P channel section by diffusion. Furthermore, the P<+> type channel stopping regions 22 and 23 of an N channel section are also formed by locating the regions at the end sections of the region 14. Then, thick oxide films 24 are produced on these regions by thermal treatment to provide gate oxide films 28 and 26 by removing the films 17 and 16. Then N<+> type source and drain regions 29 and 30 of an N channel section contacting with the regions 23 and 22 are formed by diffusion in the region 14 by consisting films 28 and 26 as masks. Furthermore, N<+> type stoppng regions 31 and 32 of a P channel section contacting with the regions 22 and 21 are formed.

Inventors

• 👤 Junichi Ochiai
• 👤 Hiroyuki Muto

Bibliographic Details