Transistor

Abstract

Abstract PURPOSE:To improve the secondary breakdown resistance of a main transistor in forward and reverse directions by forming protective diode elements made of transistors of base-opened on the same chip. CONSTITUTION:This transistor includes an N<-> type collector region 12, P type first base region 13a and second base region 13b formed on the surface of the region 12, N type first emitter region 14a and second emitter region 14b formed on the surface of the regions 13a, 13b, respectively, and conductor 16c for connecting the emitter regions 14a and 14b. A protective transistor includes the collector region 12, second base region 13b, and second emitter region 14b as a diode element. The protective transistor is opened at the base, and is connected between the collector and the emitter of the main transistor.

Inventors

• 👤 Ikunori Takada

Bibliographic Details