Processing method of semiconductor substrate

Abstract

Abstract PURPOSE:To prevent evaporation of V group elements from a substrate by a method wherein a III-V group semiconductor substrate is contacted to a V group element containing semiconductor indicating a higher V group element decomposition pressure than that of the former and a heat treatment is performed. CONSTITUTION:On an ion-injected GaAs substrate 1 to be heat-treated, GaAs substrate 2 on which more amount of ion has been injected is closely adhered, they are laminated on a quartz susceptor 5 and a heat-treatment is performed. Hence, as a larger damaged region is obtained in proportion to the increasing amount of ion injection and an As decomposition pressure is raised, the As decomposition pressure of the substrate 1 is relatively lowered, and a thermally stabilized heat treatment can be performed. Besides, when an InAs is used as a substrate 2, it has a high decomposition pressure than the GaAs and an ion injection into the substrate 2 becomes unnecessary.

Inventors

• 👤 Jiro Kasahara
• 👤 Kenji Morisane

Bibliographic Details