Semiconductor rectifying device

Abstract

Abstract PURPOSE:To lower a forward voltage drop of and to shorten a reverse recovering time of a semiconductor rectifying device by forming a P<-> type semiconductor layer on an N<+> type semiconductor layer and forming a plurality of P<+> type regions and N<+> type regions in a layer thereon. CONSTITUTION:A P<-> type semiconductor layer is formed on an N<+> type semiconductor layer 1, a plurality of regions 14 having a plurality of P<+> type semiconductor regions 13 and a plurality of regions 16 having a plurality of regions N<+> type semiconductor regions 15 are formed thereon. When a voltage of positive at the side of electrode 17 is applied between the electrodes 4 and 17, holes are injected from the side of the regions 13 to the side of the layer 2. Further, electrons are introduced from the side of the layer 1 to the side of the layer 2, and the electrodes 4 and 14 becomes conductive therebetween. When a voltage of negative at the side of the electrode 17 is applied thereto, the region 15 disposed in parallel with the region 13 absorbs electrons injected to the side of the layer 2 from the side of the layer 1 when becoming conductive therebetween. Accordingly, accumulation of electrons can be avoided in the boundary between the layer 2 and the regions 13.

Inventors

• 👤 Yoshihito Amamiya
• 👤 Takayuki Sugata
• 👤 Yoshihiko Mizushima

Bibliographic Details