Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To control the current passing area of the semiconductor device by implanting an ion beam on the semiconductor layer by providing with a mask thereon and varying the implanting angle thereof. CONSTITUTION:An N type AlGaAs 4, an N type GaAs active layer 5, a P type AlGaAs 6 and a P<+> type GaAs 7 are laminated on an N<+> type GaAs substrate 2, a mask 50 is retained at predetermined distance in disposition, and proton 51 is implanted from obliquely upper rightward and leftward directions thereto. In this case the outside of the region 52c is implanted in double. The implantation depth is formed to 0.5mum above the active layer 5, and adverse effect of the implantation to the crystal defects to the active layer is prevented. After the implantation, a heat treatment is executed. According to this configuration, the active streak width l of the narrow width less than 10mum is regeneratively formed in arbitrary depth, and a desired current passing area can be obtained. After the heat treatment, both ohmic electrodes 60, 61 are attached to both side thereof.

Inventors

• 👤 Ario Mita
• 👤 Hiromichi Sato

Bibliographic Details