Light emitting diode

Abstract

Abstract PURPOSE:To obtain an excellent light emitting directivity of a light emitting diode by gradually expanding the width of a structure of an active layer and a light guide layer forming the diode toward a light pickup surface and surrounding the side surface with a semiconductor layer having low refractive index. CONSTITUTION:n Type Al0.3Ga0.7As clad layer 13, p type Al0.1Ga0.9As active layer 11, p type Al0.8Ga0.2As optical guide layer 14, p type Al0.3Ga0.7As clad layer 12 are laminated on an n type GaAs substrate 15, and are epitaxially grown in liquid phase. Then, a photolithographic mask is coated on predetermined region of the uppermost clad layer 12, is selectively chemically etched, and the portions of the layers 11, 14 and 12 are retained in trapezoidal shape. Thereafter, it is epitaxially grown in liquid phase while surrounding the side surface of the trapezoidal shape retained with an n type Al0.3Ga0.7As layer 19. An insulating film 16 is then coated on the surface thereof, an opening is perforated thereat, a p type side electrode 17 making contact with the layer 12 is coated thereon, and an n type side electrode 18 is coated on the back surface of the substrate 15. The light can be condensed in the layer 11 in this manner.

Inventors

• 👤 Masaaki Sakuta
• 👤 Hiroshi Takano
• 👤 Ryozo Furukawa
• 👤 Kazuyoshi Tateishi
• 👤 Ganzo Iwane

Bibliographic Details