Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To make it possible to obtain a surface levelled to a high degree by a method wherein a convex part of an oxidized film is also applied etching at the same time when the oxidized film at a desired portion on a substrate surface is applied etching treatment. CONSTITUTION:A nitriding Si film 12 is formed partially on the surface of the n type Si substrate 11. Then the oxidized film 13 is formed on the surface of the substrate not provided with the film 12. Then again, an oxidized film 20 is formed on the surface of the substrate 11, and a photosensitive material 21 of low viscosity is coated to the surface on which the oxidized film 20 is formed. The material 21 is coated in plenty to the concave part but little to the convex part. Subsequently, by getting rid of the oxidized film at the portion where the material 21 is not coated, soaking the substrate 11 in an etching reagent, the convex part of the film 13 to which the material 21 is little coated is also removed, and therefore, there can be obtained the oxidized film wholly made level. In the following, the material 21 is removed and the film 12 is got rid of. After impurities have been diffused, a p type region 15 is formed within the substrate 11 and further, within the region 15 is formed an n type region 14. Whereby steps such as bird beak of the oxidized film are greatly reduced and wire snappings and the like of the wirings to the electrods can be prevented from the occurrence.

Inventors

• 👤 Hiroyuki Wakabayashi
• 👤 Naosada Tomari

Bibliographic Details