Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To contrive the improvement in the shortening of steps of manufacturing a semiconductor device and the yield thereof by forming simultaneously an impurity diffusing mask at the time of forming monocrystalline or polycrystalline Si resistor with another wire or using a wire formed on the resistance layer. CONSTITUTION:An SiO2 film 2 is formed on an Si substrate 1 to form selectively polysilicon layers 4, 5 thereon. It is thermally oxidized to form an SiO2 film 6 thereon, B ions are implanted thereon, and is coated then with polysilicon layer 7. It is photoetched to form wiring tubes 8, 9 thereon. Then, P ions are implanted in high density to form wiring layer 5b and resistance layer 5a thereon. When the superimposition of the polysilicon layers 5, 9 is reduced, the layer 5a is diffused from both sides by the heat treatment after implanting ions to form a wiring layer. In this manner the degree of freedom of designing is increased. This configuration can omit the step of manufacturing mask to improve the yield thereof.

Inventors

• 👤 Kenjirou Mitake

Bibliographic Details