Schottky barrier diode

Abstract

Abstract PURPOSE:To improve efficiency of diode by a method wherein a surface of a semiconductor layer of one conduction mechanism is surrounded by a region of reverse conduction mechanism and Schottky barrier forming metal electrode is applied on the surrounded surface and area of surrounded surface is taken to be a specified value. CONSTITUTION:An N<->-type layer 6 is grown on a N<+>-type semiconductor substrate 8, and on its circumference a P<+>-type region 7 which does not get to the substrate 8 is formed by diffusion and at the center the region of spacing a is left uncovered. Next over this region and beyond the region 7 an oxide film 9 is applied, and an opening is perfolated on a region which has the spacing a, and Schottky barrier forming metal layer 5 is applied on it. Next a positive electrode A is applied on the layer 5, and a negative electrode B is applied on the back surface of the substrate 8, and on the region 7 a reverse voltage applying electrode C is built. On thus constituted device by forward voltage being biased between A and B and reverse voltage being biased between B and A, control over a diode is attained, and spacing a is chosen so that path of reverse current is closed by a depletion layer due to biasing of reverse voltage.

Inventors

• 👤 Yuki Shimada
• 👤 Shohei Sekiya
• 👤 Katsunori Ichikawa

Bibliographic Details