Inactivation method of surface of semiconductor

Abstract

Abstract PURPOSE:To inactivate the surface of a semiconductor made of compound by coating silica emulsion on the surface of the semiconductor, heating it, and forming an oxide film having preferable broundary properties and insulating property. CONSTITUTION:After purifying the surface of a GaAs substrate, silica emulsion (containing silica, its organic compound as bases in an alcoholic solution) is rotatably coated on the substrate in a dry atmosphere. The solution is diluted with alcohol or the rotating speed is altered to vary the thickness of the oxide film. The oxide film thus formed is heat treated at 160, 450 and 700 deg.C in dry N2 to densify the oxide (SiO2) film. The densifying temperature is preferably 600-800 deg.C. Finally, when it is treated at 500 deg.C in 2%-H2+98%-N2, the SiO2 film becomes preferable characteristics. Aluminum is evaporated thereon, the back surface of the substrate is cleaned, aluminum is then evaporated, and it is treated at 450 deg.C in 2%-H2+98%-N2. Then, the properties in the boundary between the insulating film and the semicondcutor can be improved. According to this method, it can be simply inactivated on the surface as compared with the conventional process.

Inventors

• 👤 Katsumi Miyauchi
• 👤 Maa Tsuoopin

Bibliographic Details