Plasma etching device

Abstract

Abstract PURPOSE: To equalize the etching speed by connecting a sub chamber having sufficient capacity to an etching chamber in isotropic shape and disposition and providing an exit in the sub chamber. CONSTITUTION: The annular sub chamber 11 is formed at the lower end of the cylindrical etching chamber 10, and an exit 12 is formed on the side surface of the chamber 11. The volumetric ratio of the chamber 11 to the chamber 10 is 0.2W1. If it is less than 0.2, the irregular etching speed is increased. The cross sectional area of the sub chamber is formed 3W5 times the connector 15 to eliminate the affect of the exit to the gas flow in the etching chamber. The radial width of the side chamber is formed approximately equal to the height or less than 5 times the height to prevent the flowing resistance from increasing. This configuration can flow gas generally isotropically from the periphery of a flat electrode 14 placing a workpiece, and isotropically exhausted from the etching chamber. Accordingly, the etching speed is equalized. COPYRIGHT: (C)1981,JPO&Japio

Inventors

• 👤 Tatsumi Mizutani
• 👤 Norio Kanai
• 👤 Kunio Harada
• 👤 Hideo Komatsu
• 👤 Shinya Iida

Bibliographic Details